BD705 Specs and Replacement

Type Designator: BD705

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO66

 BD705 Substitution

- BJT ⓘ Cross-Reference Search

 

BD705 datasheet

 ..1. Size:190K  inchange semiconductor

 bd705.pdf pdf_icon

BD705

isc Silicon NPN Power Transistor BD705 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Sustaining Voltage- V = 45V(Min.) CEO(SUS) Complement to Type BD706 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

Detailed specifications: BD698, BD698A, BD699, BD699A, BD700, BD700A, BD701, BD702, S9013, BD706, BD707, BD708, BD709, BD710, BD711, BD712, BD719

Keywords - BD705 pdf specs

 BD705 cross reference

 BD705 equivalent finder

 BD705 pdf lookup

 BD705 substitution

 BD705 replacement