BD721 Specs and Replacement

Type Designator: BD721

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO126

 BD721 Substitution

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BD721 datasheet

 ..1. Size:190K  inchange semiconductor

 bd719 bd721 bd723 bd725.pdf pdf_icon

BD721

isc Silicon NPN Power Transistor BD719/721/723/725 DESCRIPTION DC Current Gain- h = 20(Min)@ I = 2A FE C Complement to Type BD720/722/724/726 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

 ..2. Size:189K  inchange semiconductor

 bd721.pdf pdf_icon

BD721

isc Silicon NPN Power Transistor BD721 DESCRIPTION DC Current Gain- h = 40@ I = 0.5A FE C Collector-Emitter Breakdown Voltage - V = 80V(Min) (BR)CEO Complement to type BD722 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATIN... See More ⇒

Detailed specifications: BD707, BD708, BD709, BD710, BD711, BD712, BD719, BD720, 2SD669A, BD722, BD723, BD724, BD725, BD726, BD733, BD734, BD735

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