BD734 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD734
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 22 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO220
BD734 Transistor Equivalent Substitute - Cross-Reference Search
BD734 Datasheet (PDF)
..1. Size:255K inchange semiconductor
bd734.pdf
bd734.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD734 DESCRIPTION DC Current Gain - : hFE = 40(Min.)@ IC= -20mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= -25V(Min.) Complement to Type BD733 APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Co
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N6672 | FPS6513 | BD684
