BD743E Datasheet, Equivalent, Cross Reference Search
Type Designator: BD743E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
BD743E Transistor Equivalent Substitute - Cross-Reference Search
BD743E Datasheet (PDF)
bd743-a-b-c.pdf
BD743, BD743A, BD743B, BD743CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD744 SeriesTO-220 PACKAGE(TOP VIEW) 90 W at 25C Case Temperature 15 A Continuous Collector CurrentB 1 20 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maxim
bd743 bd743a bd743b bd743c.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors BD743/A/B/C DESCRIPTION With TO-220C package Complement to type BD744/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ra
bd743a.pdf
isc Silicon NPN Power Transistor BD743ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD744AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier
bd743c.pdf
isc Silicon NPN Power Transistor BD743CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD744CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifie
bd743b.pdf
isc Silicon NPN Power Transistor BD743BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD744BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier
bd743 a b c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD743/A/B/C DESCRIPTION With TO-220C package Complement to type BD744/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute m
bd743.pdf
isc Silicon NPN Power Transistor BD743DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD744Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier a
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BF248-3 | BD780 | FT024 | BD417 | BF257N | FT1725 | BD943
History: BF248-3 | BD780 | FT024 | BD417 | BF257N | FT1725 | BD943
LIST
Last Update
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050