BD744A
Datasheet, Equivalent, Cross Reference Search
Type Designator: BD744A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90
W
Maximum Collector-Base Voltage |Vcb|: 70
V
Maximum Collector-Emitter Voltage |Vce|: 70
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 5
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO220
BD744A
Transistor Equivalent Substitute - Cross-Reference Search
BD744A
Datasheet (PDF)
..1. Size:215K inchange semiconductor
bd744a.pdf
isc Silicon PNP Power Transistor BD744ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifie
9.1. Size:86K bourns
bd744-a-b-c.pdf
BD744, BD744A, BD744B, BD744CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD743 SeriesTO-220 PACKAGE(TOP VIEW) 90 W at 25C Case Temperature 15 A Continuous Collector CurrentB 1 20 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maxim
9.2. Size:213K inchange semiconductor
bd744b.pdf
isc Silicon PNP Power Transistor BD744BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifie
9.3. Size:212K inchange semiconductor
bd744c.pdf
isc Silicon PNP Power Transistor BD744CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifi
9.4. Size:212K inchange semiconductor
bd744.pdf
isc Silicon PNP Power Transistor BD744DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier
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