All Transistors. BD745F Datasheet

 

BD745F Datasheet and Replacement


   Type Designator: BD745F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 115 W
   Maximum Collector-Base Voltage |Vcb|: 170 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO218
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BD745F Datasheet (PDF)

 9.1. Size:86K  bourns
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BD745F

BD745, BD745A, BD745B, BD745CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD746 Series 115 W at 25C Case TemperatureB1 20 A Continuous Collector CurrentC 2 25 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma

 9.2. Size:217K  inchange semiconductor
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BD745F

isc Silicon NPN Power Transistor BD745/A/B/CDESCRIPTIONCollector Current -I = 20ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)- BD745; 60V(Min)- BD745A(BR)CEO80V(Min)- BD745B; 100V(Min)- BD745CComplement to Type BD746/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power

 9.3. Size:93K  inchange semiconductor
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BD745F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD745/A/B/C DESCRIPTION With TO-3PN package Complement to type BD746/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BCP56TA | BD944F

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