BD746E Specs and Replacement
Type Designator: BD746E
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO218
BD746E Substitution
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BD746E datasheet
BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD745 Series (TOP VIEW) 115 W at 25 C Case Temperature B 1 20 A Continuous Collector Current C 2 25 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD746/A/B/C DESCRIPTION With TO-3PN package Complement to type BD745/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli... See More ⇒
bd746 bd746a bd746b bd746c.pdf 
isc Silicon PNP Power Transistor BD746/A/B/C DESCRIPTION Collector Current -I = -20A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD746; -60V(Min)- BD746A (BR)CEO -80V(Min)- BD746B; -100V(Min)- BD746C Complement to Type BD745/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ... See More ⇒
Detailed specifications: BD745D, BD745E, BD745F, BD746, BD746A, BD746B, BD746C, BD746D, BC548, BD746F, BD750, BD750A, BD750B, BD750C, BD751, BD751A, BD751B
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