BD750A Specs and Replacement

Type Designator: BD750A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 130 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

 BD750A Substitution

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BD750A datasheet

 ..1. Size:212K  inchange semiconductor

 bd750 bd750a.pdf pdf_icon

BD750A

isc Silicon PNP Power Transistors BD750/750A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -90V(Min)- BD750 CEO(SUS) = -120V(Min)- BD750A High Power Dissipation Complement to Type BD751/751A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MA... See More ⇒

 ..2. Size:75K  inchange semiconductor

 bd750 bd750a .pdf pdf_icon

BD750A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750/750A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A High Power Dissipation Complement to Type BD751/751A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) ... See More ⇒

 9.1. Size:114K  inchange semiconductor

 bd750b bd750c .pdf pdf_icon

BD750A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750B/750C DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = -100V(Min)- BD751B = -130V(Min)- BD751C High Power Dissipation Complement to Type BD751B/751C APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ... See More ⇒

 9.2. Size:211K  inchange semiconductor

 bd750b bd750c.pdf pdf_icon

BD750A

isc Silicon PNP Power Transistors BD750B/750C DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min)- BD751B CEO(SUS) = -130V(Min)- BD751C High Power Dissipation Complement to Type BD751B/751C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUT... See More ⇒

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Detailed specifications: BD746, BD746A, BD746B, BD746C, BD746D, BD746E, BD746F, BD750, BC337, BD750B, BD750C, BD751, BD751A, BD751B, BD751C, BD775, BD776

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