BD780 Specs and Replacement
Type Designator: BD780
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO126
BD780 Substitution
- BJT ⓘ Cross-Reference Search
BD780 datasheet
Order this document MOTOROLA by BD777/D SEMICONDUCTOR TECHNICAL DATA NPN BD777 Plastic Darlington PNP BD776 Complementary Silicon Power Transistors BD778 . . . designed for general purpose amplifier and high speed switching applications. High DC Current Gain BD780* hFE = 1400 (Typ) @ IC = 2.0 Adc Collector Emitter Sustaining Voltage @ 10 mAdc *Motorola Preferred... See More ⇒
Detailed specifications: BD751A, BD751B, BD751C, BD775, BD776, BD777, BD778, BD779, 2N3906, BD785, BD786, BD787, BD788, BD789, BD790, BD791, BD792
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