BD780 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD780
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD780 Transistor Equivalent Substitute - Cross-Reference Search
BD780 Datasheet (PDF)
bd776 bd777 bd778 bd780.pdf
Order this documentMOTOROLAby BD777/DSEMICONDUCTOR TECHNICAL DATANPNBD777Plastic DarlingtonPNPBD776Complementary Silicon PowerTransistorsBD778. . . designed for general purpose amplifier and highspeed switching applications. High DC Current GainBD780*hFE = 1400 (Typ) @ IC = 2.0 Adc CollectorEmitter Sustaining Voltage @ 10 mAdc*Motorola Preferred
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BF257N | BD943 | BF248-3 | FT024 | BD417 | FT1725
History: BF257N | BD943 | BF248-3 | FT024 | BD417 | FT1725
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050