All Transistors. BD789 Datasheet

 

BD789 Datasheet, Equivalent, Cross Reference Search

Type Designator: BD789

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

BD789 Transistor Equivalent Substitute - Cross-Reference Search

 

BD789 Datasheet (PDF)

1.1. bd789 bd790 bd791 bd792.pdf Size:176K _motorola

BD789
BD789

Order this document MOTOROLA by BD789/D SEMICONDUCTOR TECHNICAL DATA NPN BD789 Complementary Plastic Silicon * BD791 Power Transistors PNP . . . designed for low power audio amplifier and lowcurrent, high speed switching BD790 applications. High CollectorEmitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) BD789, BD790 BD792* VCEO(sus) = 100 Vdc (Min) BD791, BD792 High

Datasheet: 2SA1577 , 2SA1578 , 2SA1579N , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , BD139 , 2SA1580-5 , 2SA1581 , 2SA1582 , 2SA1583 , 2SA1584 , 2SA1585 , 2SA1586G , 2SA1586O .

 
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