BD792 Specs and Replacement

Type Designator: BD792

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

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BD792 datasheet

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BD792

Order this document MOTOROLA by BD789/D SEMICONDUCTOR TECHNICAL DATA NPN BD789 Complementary Plastic Silicon * BD791 Power Transistors PNP . . . designed for low power audio amplifier and low current, high speed switching BD790 applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) BD789, BD790 BD792* VCEO(sus) = 100 Vdc (Min) BD791... See More ⇒

Detailed specifications: BD780, BD785, BD786, BD787, BD788, BD789, BD790, BD791, S9014, BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802

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