All Transistors. BD825-25 Datasheet

 

BD825-25 Datasheet and Replacement


   Type Designator: BD825-25
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO202
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BD825-25 Datasheet (PDF)

 9.1. Size:51K  philips
 bd825 bd829.pdf pdf_icon

BD825-25

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D067BD825; BD829NPN power transistorsProduct specification 1998 May 29Supersedes data of 1997 Jun 20File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN power transistors BD825; BD829FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2

 9.2. Size:211K  inchange semiconductor
 bd825.pdf pdf_icon

BD825-25

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD825DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC3712 | 2SA1407E | NB221YX | 2SA1262 | 2SA871 | 2N2872 | T11

Keywords - BD825-25 transistor datasheet

 BD825-25 cross reference
 BD825-25 equivalent finder
 BD825-25 lookup
 BD825-25 substitution
 BD825-25 replacement

 

 
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