BD825-25 Specs and Replacement
Type Designator: BD825-25
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO202
BD825-25 Substitution
- BJT ⓘ Cross-Reference Search
BD825-25 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification 1998 May 29 Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD825 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒
Detailed specifications: BD816A, BD817, BD817A, BD818, BD818A, BD825, BD825-10, BD825-16, 2SC2655, BD825-6, BD825A, BD825B, BD826, BD826-10, BD826-16, BD826-25, BD826-6
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