All Transistors. BD826-16 Datasheet

 

BD826-16 Datasheet and Replacement


   Type Designator: BD826-16
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO202
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BD826-16 Datasheet (PDF)

 9.1. Size:216K  inchange semiconductor
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BD826-16

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD826DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD825Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: TP4403 | 2SB447 | BCM846S | 2SB515D | BCP55TA | 2SB515E | BCP55-10T3

Keywords - BD826-16 transistor datasheet

 BD826-16 cross reference
 BD826-16 equivalent finder
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