BD826-16 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD826-16
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO202
BD826-16 Transistor Equivalent Substitute - Cross-Reference Search
BD826-16 Datasheet (PDF)
bd826.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD826DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD825Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: FN4F4Z | 2N2906AL | 2N2907AHR | 2N3863
History: FN4F4Z | 2N2906AL | 2N2907AHR | 2N3863
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050