All Transistors. BD827-25 Datasheet

 

BD827-25 Datasheet and Replacement


   Type Designator: BD827-25
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO202
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BD827-25 Datasheet (PDF)

 9.1. Size:211K  inchange semiconductor
 bd827.pdf pdf_icon

BD827-25

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD827DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BCP5510TA | 2SB553Y | 2SB484 | BD750A

Keywords - BD827-25 transistor datasheet

 BD827-25 cross reference
 BD827-25 equivalent finder
 BD827-25 lookup
 BD827-25 substitution
 BD827-25 replacement

 

 
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