All Transistors. BD827-6 Datasheet

 

BD827-6 Datasheet and Replacement


   Type Designator: BD827-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

 BD827-6 Substitution

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BD827-6 Datasheet (PDF)

 9.1. Size:211K  inchange semiconductor
 bd827.pdf pdf_icon

BD827-6

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD827DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: BD826-25 , BD826-6 , BD826A , BD826B , BD827 , BD827-10 , BD827-16 , BD827-25 , 2SA1015 , BD827A , BD827B , BD828 , BD828-10 , BD828-16 , BD828-25 , BD828-6 , BD828A .

History: AC173V | PTB20006

Keywords - BD827-6 transistor datasheet

 BD827-6 cross reference
 BD827-6 equivalent finder
 BD827-6 lookup
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