BD827A Specs and Replacement
Type Designator: BD827A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO202
BD827A Substitution
- BJT ⓘ Cross-Reference Search
BD827A datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD827 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒
Detailed specifications: BD826-6, BD826A, BD826B, BD827, BD827-10, BD827-16, BD827-25, BD827-6, 2SD669, BD827B, BD828, BD828-10, BD828-16, BD828-25, BD828-6, BD828A, BD828B
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