All Transistors. BD828-25 Datasheet

 

BD828-25 Datasheet and Replacement


   Type Designator: BD828-25
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO202
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BD828-25 Datasheet (PDF)

 9.1. Size:211K  inchange semiconductor
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BD828-25

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD828DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SB464 | BCE178 | 2SA843 | 2SA1051A | 2SC3823 | MMBT4122 | 2N1963

Keywords - BD828-25 transistor datasheet

 BD828-25 cross reference
 BD828-25 equivalent finder
 BD828-25 lookup
 BD828-25 substitution
 BD828-25 replacement

 

 
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