All Transistors. BD829-6 Datasheet

 

BD829-6 Datasheet and Replacement


   Type Designator: BD829-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
      - BJT Cross-Reference Search

   

BD829-6 Datasheet (PDF)

 9.1. Size:51K  philips
 bd825 bd829.pdf pdf_icon

BD829-6

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D067BD825; BD829NPN power transistorsProduct specification 1998 May 29Supersedes data of 1997 Jun 20File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN power transistors BD825; BD829FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2

 9.2. Size:211K  inchange semiconductor
 bd829.pdf pdf_icon

BD829-6

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD829DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BCP627A | TP9380 | BC860AW | TP2907 | BD711 | BD810G | BCP5410

Keywords - BD829-6 transistor datasheet

 BD829-6 cross reference
 BD829-6 equivalent finder
 BD829-6 lookup
 BD829-6 substitution
 BD829-6 replacement

 

 
Back to Top

 


 
.