BD837 Datasheet, Equivalent, Cross Reference Search

   Type Designator: BD837
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202

BD837 Transistor Equivalent Substitute - Cross-Reference Search