All Transistors. BD841 Datasheet

 

BD841 Datasheet and Replacement


   Type Designator: BD841
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

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BD841 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
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BD841

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD841DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD842Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in television circuits and audio applicationsABSOLUTE M

Datasheet: BD833 , BD834 , BD835 , BD836 , BD837 , BD838 , BD839 , BD840 , 2N3904 , BD842 , BD843 , BD844 , BD845 , BD846 , BD847 , BD848 , BD849 .

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