All Transistors. BD844 Datasheet

 

BD844 Datasheet and Replacement


   Type Designator: BD844
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

 BD844 Substitution

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BD844 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
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BD844

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD843Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: BD836 , BD837 , BD838 , BD839 , BD840 , BD841 , BD842 , BD843 , D882 , BD845 , BD846 , BD847 , BD848 , BD849 , BD850 , BD861 , BD862 .

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