2N2906 Datasheet. Specs and Replacement
Type Designator: 2N2906 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO18
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2N2906 datasheet
..1. Size:52K philips
2n2906 2n2906a 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors 1997 Jun 02 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitte... See More ⇒
..3. Size:141K cdil
2n2906 7.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Co... See More ⇒
0.1. Size:73K st
2n2904-2n2905-2n2906-2n2907.pdf
2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- ... See More ⇒
0.2. Size:10K semelab
2n2906dcsm.pdf
2N2906DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 60V CEO 6.22 0.13 A = 1.27 0.13 I = 0.6A C (0.0... See More ⇒
0.3. Size:226K cdil
2n2906a 07a.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A 2N2907A TO-18 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2906A, 07A UNIT Collector -Emitter Voltage VCEO 60 V Collector -Base Voltage VCBO 60 V Emitter -Base Voltage VEBO 5.0 V ... See More ⇒
0.4. Size:50K kec
2n2906e.pdf
SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 ICEX=-50nA(Max.), IBL=-50nA(Max.) 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=-30V, VEB=-3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.0... See More ⇒
0.5. Size:52K kec
2n2906u.pdf
SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM MILLIMETERS 1 6 _ Low Leakage Current A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 ICEX=-50nA(Max.), IBL=-50nA(Max.) _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 @VCE=-30V, VEB=-3V. C 0.65 Excellent DC Current Gain Linearity. D 0.2+0.10/-0.05 G 0-0.1 Low... See More ⇒
0.6. Size:100K microsemi
2n2906aub.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907A JANSD 10K Rads (Si) 2N2906AL 2N2907AL JANSP 30K Rads (Si) 2N2906AUA 2N2907AUA JANS... See More ⇒
0.7. Size:100K microsemi
2n2906aua.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907A JANSD 10K Rads (Si) 2N2906AL 2N2907AL JANSP 30K Rads (Si) 2N2906AUA 2N2907AUA JANS... See More ⇒
0.8. Size:100K microsemi
2n2906al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907A JANSD 10K Rads (Si) 2N2906AL 2N2907AL JANSP 30K Rads (Si) 2N2906AUA 2N2907AUA JANS... See More ⇒
0.9. Size:99K microsemi
2n2906aubc.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS qua... See More ⇒
Detailed specifications: 2N2904AS, 2N2904L, 2N2904S, 2N2905, 2N2905A, 2N2905AL, 2N2905L, 2N2905S, 2N4401, 2N2906A, 2N2906ACSM, 2N2906ADCSM, 2N2906AQF, 2N2906CSM, 2N2907, 2N2907A, 2N2907ACSM
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