2N2906 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N2906

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO18

2N2906 Transistor Equivalent Substitute - Cross-Reference Search

2N2906 Datasheet (PDF)

..1. Size:52K philips
2n2906 2n2906a 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2906; 2N2906APNP switching transistors1997 Jun 02Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistors 2N2906; 2N2906AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 emitte

..2. Size:96K central
2n2906 2n2907.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

..3. Size:141K cdil
2n2906 7.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can PackageSwitching and Linear ApplicationABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 40 VVCBOCollector Base Voltage 60 VVEBOEmitter Base Voltage 5 VICCollector Current Co

0.1. Size:73K st
2n2904-2n2905-2n2906-2n2907.pdf

2N2904/2N29052N2906/2N2907GENERAL PURPOSE AMPLIFIERS AND SWITCHESDESCRIPTIONThe 2N2904, 2N2905, 2N2906 and 2N2907 are si-licon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904, 2N2905) and in Jedec TO-18 (for2N2906 and 2N2907) metal cases. They are desi-gned for high-speed saturated switching and gene-ral purpose applications.2N2904/2N2905 approved to CECC 50002-

0.2. Size:10K semelab
2n2906dcsm.pdf

2N2906DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 60V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.0

0.3. Size:226K cdil
2n2906a 07a.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A2N2907ATO-18Switching And Linear Application DC to VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N2906A, 07A UNITCollector -Emitter Voltage VCEO 60 VCollector -Base Voltage VCBO 60 VEmitter -Base Voltage VEBO 5.0 V

0.4. Size:52K kec
2n2906u.pdf

SEMICONDUCTOR 2N2906UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESDIM MILLIMETERS1 6_Low Leakage Current A 2.00 + 0.20_2 5 A1 1.3 + 0.1: ICEX=-50nA(Max.), IBL=-50nA(Max.)_B 2.1 + 0.13 4 D _B1 1.25 + 0.1@VCE=-30V, VEB=-3V.C 0.65Excellent DC Current Gain Linearity.D 0.2+0.10/-0.05G 0-0.1Low

0.5. Size:50K kec
2n2906e.pdf

SEMICONDUCTOR 2N2906ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURES1 6 DIM MILLIMETERSLow Leakage Current _A 1.6 + 0.05_A1 1.0 + 0.05: ICEX=-50nA(Max.), IBL=-50nA(Max.)2 5_B 1.6 + 0.05_B1 1.2 + 0.05@VCE=-30V, VEB=-3V.C 0.503 4Excellent DC Current Gain Linearity._D 0.2 + 0.05_H 0.5 + 0.0

0.6. Size:99K microsemi
2n2906aubc.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS qua

0.7. Size:100K microsemi
2n2906al.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS

0.8. Size:100K microsemi
2n2906aua.pdf