All Transistors. 2N2906 Datasheet

 

2N2906 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N2906
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO18

 2N2906 Transistor Equivalent Substitute - Cross-Reference Search

   

2N2906 Datasheet (PDF)

 ..1. Size:52K  philips
2n2906 2n2906a 2.pdf

2N2906
2N2906

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2906; 2N2906APNP switching transistors1997 Jun 02Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistors 2N2906; 2N2906AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 emitte

 ..2. Size:96K  central
2n2906 2n2907.pdf

2N2906
2N2906

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 ..3. Size:141K  cdil
2n2906 7.pdf

2N2906
2N2906

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can PackageSwitching and Linear ApplicationABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 40 VVCBOCollector Base Voltage 60 VVEBOEmitter Base Voltage 5 VICCollector Current Co

 0.1. Size:73K  st
2n2904-2n2905-2n2906-2n2907.pdf

2N2906
2N2906

2N2904/2N29052N2906/2N2907GENERAL PURPOSE AMPLIFIERS AND SWITCHESDESCRIPTIONThe 2N2904, 2N2905, 2N2906 and 2N2907 are si-licon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904, 2N2905) and in Jedec TO-18 (for2N2906 and 2N2907) metal cases. They are desi-gned for high-speed saturated switching and gene-ral purpose applications.2N2904/2N2905 approved to CECC 50002-

 0.2. Size:10K  semelab
2n2906dcsm.pdf

2N2906

2N2906DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 60V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.0

 0.3. Size:226K  cdil
2n2906a 07a.pdf

2N2906
2N2906

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A2N2907ATO-18Switching And Linear Application DC to VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N2906A, 07A UNITCollector -Emitter Voltage VCEO 60 VCollector -Base Voltage VCBO 60 VEmitter -Base Voltage VEBO 5.0 V

 0.4. Size:50K  kec
2n2906e.pdf

2N2906
2N2906

SEMICONDUCTOR 2N2906ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURES1 6 DIM MILLIMETERSLow Leakage Current _A 1.6 + 0.05_A1 1.0 + 0.05: ICEX=-50nA(Max.), IBL=-50nA(Max.)2 5_B 1.6 + 0.05_B1 1.2 + 0.05@VCE=-30V, VEB=-3V.C 0.503 4Excellent DC Current Gain Linearity._D 0.2 + 0.05_H 0.5 + 0.0

 0.5. Size:52K  kec
2n2906u.pdf

2N2906
2N2906

SEMICONDUCTOR 2N2906UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESDIM MILLIMETERS1 6_Low Leakage Current A 2.00 + 0.20_2 5 A1 1.3 + 0.1: ICEX=-50nA(Max.), IBL=-50nA(Max.)_B 2.1 + 0.13 4 D _B1 1.25 + 0.1@VCE=-30V, VEB=-3V.C 0.65Excellent DC Current Gain Linearity.D 0.2+0.10/-0.05G 0-0.1Low

 0.6. Size:100K  microsemi
2n2906aub.pdf

2N2906
2N2906

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS

 0.7. Size:100K  microsemi
2n2906aua.pdf

2N2906
2N2906

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS

 0.8. Size:100K  microsemi
2n2906al.pdf

2N2906
2N2906

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS

 0.9. Size:99K  microsemi
2n2906aubc.pdf

2N2906
2N2906

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS qua

 0.10. Size:99K  microsemi
2n2906a 2n2907a 2n2906al 2n2907al 2n2906aua 2n2907aua 2n2906aub 2n2907aub 2n2906aubc 2n2907aubc.pdf

2N2906
2N2906

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS qua

Datasheet: 2N2904AS , 2N2904L , 2N2904S , 2N2905 , 2N2905A , 2N2905AL , 2N2905L , 2N2905S , 2SD669A , 2N2906A , 2N2906ACSM , 2N2906ADCSM , 2N2906AQF , 2N2906CSM , 2N2907 , 2N2907A , 2N2907ACSM .

 

 
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