BD895 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD895
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220
BD895 Transistor Equivalent Substitute - Cross-Reference Search
BD895 Datasheet (PDF)
bd895.pdf
Power Transistors www.jmnic.comBD895 Silicon PNP Transistors Features B C E With TO-220 package With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 45 V VCEO Collector to emitter voltage 45 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 8.0 A
bd895.pdf
isc Silicon NPN Darlington Power Transistor BD895DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD896Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL
bd895 bd897 bd899 bd901.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901 DESCRIPTION With TO-220C package Complement to type BD896/898/900/902 DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3
bd895a bd897a bd899a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em
bd895a.pdf
isc Silicon NPN Darlington Power Transistor BD895ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD896AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
