BD897 Datasheet and Replacement

Power Transistors www.jmnic.comBD897 Silicon PNP Transistors Features B C E With TO-220 package With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 60 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 8.0 A

isc Silicon NPN Darlington Power Transistor BD897DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD898Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901 DESCRIPTION With TO-220C package Complement to type BD896/898/900/902 DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

isc Silicon NPN Darlington Power Transistor BD897ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD898AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP