BD912 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD912
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
BD912 Transistor Equivalent Substitute - Cross-Reference Search
BD912 Datasheet (PDF)
bd909 bd911 bd910 bd912.pdf
BD909/911BD910/912COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The BD909 and BD911 are silicon Epitaxial-BaseNPN power transistors mounted in Jedec TO-220plastic package. They are intented for use inpower linear and switching applications.The complementary PNP types are BD910 and32BD912 respectively.1TO-220INTERNAL
bd909 bd910 bd911 bd912.pdf
BD909/911BD910/912COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The BD909 and BD911 are silicon Epitaxial-BaseNPN power transistors mounted in Jedec TO-220plastic package. They are intented for use inpower linear and switching applications.The complementary PNP types are BD910 and32BD912 respectively.1TO-220INTERNAL
bd905 bd906 bd907 bd908 bd909 bd910 bd911 bd912.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic PackagePower Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise )DESCRIPTION SYMBOL 905 907 909 911 UNIT906 908 910 912Collector -Emitter Voltage VCEO
bd910 bd912.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION With TO-220C package Complement to type BD909 BD911 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CO
bd912.pdf
isc Silicon PNP Power Transistor BD912DESCRIPTIONDC Current Gain -: h = 40@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type BD911Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIM
bd910 bd912.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION With TO-220C package Complement to type BD909 BD911 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CO
stbd910 stbd912.pdf
ST BD910 / ST BD912 PNP Complementary Silicon Power Transistors TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD910 ST BD912 Collector Base Voltage -VCBO 80 100 VCollector Emitter Voltage -VCEO 80 100 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 15 ABase Currentt -IB 5 AOTotal Power Dissipation @ TC 25 C Ptot 9
bd912i.pdf
isc Silicon PNP Power Transistor BD912IDESCRIPTIONDC Current Gain -: h = 40@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
