All Transistors. BD912 Datasheet

 

BD912 Datasheet, Equivalent, Cross Reference Search

Type Designator: BD912

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

BD912 Transistor Equivalent Substitute - Cross-Reference Search

 

BD912 Datasheet (PDF)

1.1. bd909 bd910 bd911 bd912.pdf Size:1149K _st

BD912
BD912

BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL SCH

1.2. bd905 bd906 bd907 bd908 bd909 bd910 bd911 bd912.pdf Size:122K _cdil

BD912
BD912

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise ) DESCRIPTION SYMBOL 905 907 909 911 UNIT 906 908 910 912 Collector -Emitter Voltage VCEO 45 6

 1.3. bd910 bd912.pdf Size:93K _jmnic

BD912
BD912

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION · ·With TO-220C package ·Complement to type BD909 BD911 APPLICATIONS ·Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITI

1.4. bd910 bd912.pdf Size:172K _inchange_semiconductor

BD912
BD912

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BD909 BD911 APPLICATIONS Ў¤ Intented for use in power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO

 1.5. stbd910 stbd912.pdf Size:569K _semtech

BD912
BD912

ST BD910 / ST BD912 PNP Complementary Silicon Power Transistors TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD910 ST BD912 Collector Base Voltage -VCBO 80 100 V Collector Emitter Voltage -VCEO 80 100 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 15 A Base Currentt -IB 5 A O Total Power Dissipation @ TC ≤ 25 C Ptot 9

Datasheet: BD902 , BD905 , BD906 , BD907 , BD908 , BD909 , BD910 , BD911 , BC147 , BD933 , BD933F , BD934 , BD934F , BD935 , BD935F , BD936 , BD936F .

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