BD936F
Datasheet, Equivalent, Cross Reference Search
Type Designator: BD936F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 3
MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO220F
BD936F
Transistor Equivalent Substitute - Cross-Reference Search
BD936F
Datasheet (PDF)
..1. Size:214K inchange semiconductor
bd934f bd936f bd938f bd940f bd942f.pdf
isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -150mAFE CComplement to Type BD933F/935F/937F/939F/941FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOL
9.1. Size:224K inchange semiconductor
bd934 bd936 bd938 bd940 bd942.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD934/936/938/940/942DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -150mAFE CComplement to Type BD933/935/937/939/941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can
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