BD937 Specs and Replacement
Type Designator: BD937
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
BD937 Substitution
- BJT ⓘ Cross-Reference Search
BD937 datasheet
bd933 bd935 bd937 bd939 bd941.pdf 
isc Silicon NPN Power Transistor BD933/935/937/939/941 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934/936/938/940/942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM... See More ⇒
bd933f bd935f bd937f bd939f bd941f.pdf
isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F DESCRIPTION DC Current Gain- h = 40(Min)@ I = 150mA FE C Complement to Type BD934F/936F/938F/940F/942F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLU... See More ⇒
Detailed specifications: BD933 , BD933F , BD934 , BD934F , BD935 , BD935F , BD936 , BD936F , S9013 , BD937F , BD938 , BD938F , BD939 , BD939F , BD940 , BD940F , BD941 .
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