BD938 Specs and Replacement
Type Designator: BD938
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
BD938 Substitution
- BJT ⓘ Cross-Reference Search
BD938 datasheet
bd934 bd936 bd938 bd940 bd942.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD934/936/938/940/942 DESCRIPTION DC Current Gain- h = 40(Min)@ I = -150mA FE C Complement to Type BD933/935/937/939/941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can... See More ⇒
bd934f bd936f bd938f bd940f bd942f.pdf
isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F DESCRIPTION DC Current Gain- h = 40(Min)@ I = -150mA FE C Complement to Type BD933F/935F/937F/939F/941F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOL... See More ⇒
Detailed specifications: BD934, BD934F, BD935, BD935F, BD936, BD936F, BD937, BD937F, D880, BD938F, BD939, BD939F, BD940, BD940F, BD941, BD941F, BD942
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