BD943F Datasheet and Replacement
Type Designator: BD943F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 22 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO220F
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BD943F Datasheet (PDF)
bd943f bd945f bd947f.pdf

isc Silicon NPN Power Transistor BD943F/945F/947FDESCRIPTIONDC Current Gain-: h = 85(Min)@ I = 500mAFE CComplement to Type BD944F/946F/948FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and generalpurpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
bd943.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD943 DESCRIPTION With TO-220C package Low collector saturation voltage High current capability APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMB
bd943 bd945 bd947.pdf

isc Silicon NPN Power Transistor BD943/945/947DESCRIPTIONDC Current Gain-: h = 85(Min)@ I = 500mAFE CComplement to Type BD944/946/948Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and generalpurpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA1051A | 2SD1195 | 2SB464 | MMBT4122 | GT322A | 2SA843 | 2N1963
Keywords - BD943F transistor datasheet
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History: 2SA1051A | 2SD1195 | 2SB464 | MMBT4122 | GT322A | 2SA843 | 2N1963



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