BD944 Specs and Replacement
Type Designator: BD944
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 22 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO220
BD944 Substitution
- BJT ⓘ Cross-Reference Search
BD944 datasheet
isc Silicon PNP Power Transistor BD944/946/948 DESCRIPTION DC Current Gain- h = 85(Min)@ I = -500mA FE C Complement to Type BD943/945/947 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒
isc Silicon PNP Power Transistor BD944F/946F/948F DESCRIPTION DC Current Gain- h = 85(Min)@ I = -500mA FE C Complement to Type BD943F/945F/947F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
Detailed specifications: BD940, BD940F, BD941, BD941F, BD942, BD942F, BD943, BD943F, 2SA1015, BD944F, BD945, BD945F, BD946, BD946F, BD947, BD947F, BD948
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