BD944F Datasheet, Equivalent, Cross Reference Search
Type Designator: BD944F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 22 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO220F
BD944F Transistor Equivalent Substitute - Cross-Reference Search
BD944F Datasheet (PDF)
bd944f bd946f bd948f.pdf
isc Silicon PNP Power Transistor BD944F/946F/948FDESCRIPTIONDC Current Gain-: h = 85(Min)@ I = -500mAFE CComplement to Type BD943F/945F/947FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and generalpurpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
bd944 bd946 bd948.pdf
isc Silicon PNP Power Transistor BD944/946/948DESCRIPTIONDC Current Gain-: h = 85(Min)@ I = -500mAFE CComplement to Type BD943/945/947Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and generalpurpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
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