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BD947 Specs and Replacement

Type Designator: BD947

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO220

 BD947 Substitution

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BD947 datasheet

 ..1. Size:212K  inchange semiconductor

bd943 bd945 bd947.pdf pdf_icon

BD947

isc Silicon NPN Power Transistor BD943/945/947 DESCRIPTION DC Current Gain- h = 85(Min)@ I = 500mA FE C Complement to Type BD944/946/948 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

 0.1. Size:215K  inchange semiconductor

bd943f bd945f bd947f.pdf pdf_icon

BD947

isc Silicon NPN Power Transistor BD943F/945F/947F DESCRIPTION DC Current Gain- h = 85(Min)@ I = 500mA FE C Complement to Type BD944F/946F/948F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒

Detailed specifications: BD943, BD943F, BD944, BD944F, BD945, BD945F, BD946, BD946F, TIP142, BD947F, BD948, BD948F, BD949, BD949F, BD950, BD950F, BD951

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