BD955F Specs and Replacement
Type Designator: BD955F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220F
BD955F Substitution
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BD955F datasheet
bd949f bd951f bd953f bd955f.pdf ![]()
isc Silicon NPN Power Transistor BD949F/951F/953F/955F DESCRIPTION DC Current Gain- h = 40(Min)@ I = 500mA FE C Complement to Type BD950F/952F/954F/956F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT BD94... See More ⇒
bd949 bd950 bd951 bd952 bd953 bd954 bd955 bd956.pdf ![]()
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORS BD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 ... See More ⇒
isc Silicon NPN Power Transistor BD955 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = 500mA FE C Complement to Type BD956 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Detailed specifications: BD951F, BD952, BD952F, BD953, BD953F, BD954, BD954F, BD955, BC547, BD956, BD956F, BD975, BD976, BD977, BD978, BD979, BD980
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History: 2N5255-78 | ECG54 | BD975 | ECG58
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