BDAP54B Specs and Replacement
Type Designator: BDAP54B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 18 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO66
BDAP54B Substitution
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BDAP54B datasheet
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Detailed specifications: BD976, BD977, BD978, BD979, BD980, BDAP36, BDAP54, BDAP54A, TIP41, BDAP54C, BDAP55, BDB01A, BDB01B, BDB01D, BDB02A, BDB02B, BDB02C
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