All Transistors. BDB02A Datasheet

 

BDB02A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDB02A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92

 BDB02A Transistor Equivalent Substitute - Cross-Reference Search

   

BDB02A Datasheet (PDF)

 9.1. Size:137K  motorola
 bdb02cre.pdf

BDB02A BDB02A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BDB02C/DOne Watt Amplifier TransistorsBDB02C,DPNP SiliconCOLLECTOR32BASE112EMITTER3MAXIMUM RATINGSRating Symbol BDB02C BDB02D UnitCASE 2905, STYLE 1TO92 (TO226AE)CollectorEmitter Voltage VCEO 80 100 VdcCollectorBase Voltage VCES 80 100 VdcEmitterBase Voltage VEBO

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2N3190

 

 
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