All Transistors. BDT29BF Datasheet

 

BDT29BF Datasheet and Replacement


   Type Designator: BDT29BF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 14 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220F
 

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BDT29BF Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
 bdt29f bdt29af bdt29bf bdt29cf bdt29df.pdf pdf_icon

BDT29BF

isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29F; 60V(Min)- BDT29AFCEO(SUS)80V(Min)- BDT29BF; 100V(Min)- BDT29CF120V(Min)- BDT29DFComplement to Type BDT30F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationA

 8.1. Size:211K  inchange semiconductor
 bdt29 bdt29a bdt29b bdt29c.pdf pdf_icon

BDT29BF

isc Silicon NPN Power Transistors BDT29/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29; 60V(Min)- BDT29ACEO(SUS)80V(Min)- BDT29B; 100V(Min)- BDT29CComplement to Type BDT30/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in out

 9.1. Size:160K  inchange semiconductor
 bdt29f af bf cf df.pdf pdf_icon

BDT29BF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS Designed for use

 9.2. Size:158K  inchange semiconductor
 bdt29 a b c.pdf pdf_icon

BDT29BF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C APPLICATIONS Designed for use in output stages of audio and televisio

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Datasheet: BDS29C , BDS29CSM , BDT20 , BDT21 , BDT29 , BDT29A , BDT29AF , BDT29B , BD777 , BDT29C , BDT29CF , BDT29DF , BDT29F , BDT30 , BDT30A , BDT30AF , BDT30B .

History: TN2923 | 2SD547 | GC221 | ST4150 | CL169 | 3DG1815M | 2SC3951

Keywords - BDT29BF transistor datasheet

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