All Transistors. BDT30CF Datasheet

 

BDT30CF Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDT30CF
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 14 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220F

 BDT30CF Transistor Equivalent Substitute - Cross-Reference Search

   

BDT30CF Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
bdt30f bdt30af bdt30bf bdt30cf bdt30df.pdf

BDT30CF
BDT30CF

isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30F; -60V(Min)- BDT30AFCEO(SUS)-80V(Min)- BDT30BF; -100V(Min)- BDT30CF-120V(Min)- BDT30DFComplement to Type BDT29F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operat

 8.1. Size:214K  inchange semiconductor
bdt30 bdt30a bdt30b bdt30c.pdf

BDT30CF
BDT30CF

isc Silicon PNP Power Transistors BDT30/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30; -60V(Min)- BDT30ACEO(SUS)-80V(Min)- BDT30B; -100V(Min)- BDT30CComplement to Type BDT29/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i

 9.1. Size:109K  inchange semiconductor
bdt30f af bf cf df.pdf

BDT30CF
BDT30CF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS Designed fo

 9.2. Size:158K  inchange semiconductor
bdt30 a b c.pdf

BDT30CF
BDT30CF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C APPLICATIONS Designed for use in output stages of audio and tele

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BDX84

 

 
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