All Transistors. BDT30CF Datasheet

 

BDT30CF Datasheet and Replacement


   Type Designator: BDT30CF
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 14 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220F
 

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BDT30CF Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
 bdt30f bdt30af bdt30bf bdt30cf bdt30df.pdf pdf_icon

BDT30CF

isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30F; -60V(Min)- BDT30AFCEO(SUS)-80V(Min)- BDT30BF; -100V(Min)- BDT30CF-120V(Min)- BDT30DFComplement to Type BDT29F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operat

 8.1. Size:214K  inchange semiconductor
 bdt30 bdt30a bdt30b bdt30c.pdf pdf_icon

BDT30CF

isc Silicon PNP Power Transistors BDT30/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30; -60V(Min)- BDT30ACEO(SUS)-80V(Min)- BDT30B; -100V(Min)- BDT30CComplement to Type BDT29/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i

 9.1. Size:109K  inchange semiconductor
 bdt30f af bf cf df.pdf pdf_icon

BDT30CF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS Designed fo

 9.2. Size:158K  inchange semiconductor
 bdt30 a b c.pdf pdf_icon

BDT30CF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C APPLICATIONS Designed for use in output stages of audio and tele

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Datasheet: BDT29DF , BDT29F , BDT30 , BDT30A , BDT30AF , BDT30B , BDT30BF , BDT30C , 2N2222 , BDT30DF , BDT30F , BDT31 , BDT31A , BDT31AF , BDT31B , BDT31BF , BDT31C .

History: BCR166 | 2SD576 | BDT30BF | BCY58CSM | DDTA123YKA | D42D2 | CMLT3820

Keywords - BDT30CF transistor datasheet

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