All Transistors. BDT31A Datasheet

 

BDT31A Datasheet and Replacement


   Type Designator: BDT31A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220
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BDT31A Datasheet (PDF)

 ..1. Size:229K  inchange semiconductor
 bdt31 bdt31a bdt31b bdt31c.pdf pdf_icon

BDT31A

isc Silicon NPN Power Transistors BDT31/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT31; 60V(Min)- BDT31ACEO(SUS)80V(Min)- BDT31B; 100V(Min)- BDT31CComplement to Type BDT32/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in aud

 0.1. Size:231K  inchange semiconductor
 bdt31f bdt31af bdt31bf bdt31cf bdt31df.pdf pdf_icon

BDT31A

isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT31F; 60V(Min)- BDT31AFCEO(SUS)80V(Min)- BDT31BF; 100V(Min)- BDT31CF120V(Min)- BDT31DFComplement to Type BDT32F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationA

 9.1. Size:112K  inchange semiconductor
 bdt31f af bf cf df.pdf pdf_icon

BDT31A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS Designed for use

 9.2. Size:111K  inchange semiconductor
 bdt31-a-b-c bdt31 a b c.pdf pdf_icon

BDT31A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C APPLICATIONS Designed for use in audio output stages and general ampl

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Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: CH867UPNGP | NJD2873T4G | AFY29 | ET5065 | FZT560 | 2SC2231A | DT100-900

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