BDT31BF
Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT31BF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15
W
Maximum Collector-Base Voltage |Vcb|: 120
V
Maximum Collector-Emitter Voltage |Vce|: 120
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 3
MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO220F
BDT31BF
Transistor Equivalent Substitute - Cross-Reference Search
BDT31BF
Datasheet (PDF)
..1. Size:231K inchange semiconductor
bdt31f bdt31af bdt31bf bdt31cf bdt31df.pdf
isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT31F; 60V(Min)- BDT31AFCEO(SUS)80V(Min)- BDT31BF; 100V(Min)- BDT31CF120V(Min)- BDT31DFComplement to Type BDT32F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationA
8.1. Size:229K inchange semiconductor
bdt31 bdt31a bdt31b bdt31c.pdf
isc Silicon NPN Power Transistors BDT31/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT31; 60V(Min)- BDT31ACEO(SUS)80V(Min)- BDT31B; 100V(Min)- BDT31CComplement to Type BDT32/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in aud
9.1. Size:112K inchange semiconductor
bdt31f af bf cf df.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS Designed for use
9.2. Size:111K inchange semiconductor
bdt31-a-b-c bdt31 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C APPLICATIONS Designed for use in audio output stages and general ampl
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