All Transistors. BDT32 Datasheet

 

BDT32 Datasheet and Replacement


   Type Designator: BDT32
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220
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BDT32 Datasheet (PDF)

 ..1. Size:232K  inchange semiconductor
 bdt32 bdt32a bdt32b bdt32c.pdf pdf_icon

BDT32

isc Silicon PNP Power Transistors BDT32/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = -1.0AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT32; -60V(Min)- BDT32ACEO(SUS)-80V(Min)- BDT32B; -100V(Min)- BDT32CComplement to Type BDT31/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i

 ..2. Size:157K  inchange semiconductor
 bdt32 a b c.pdf pdf_icon

BDT32

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C APPLICATIONS Designed for use in audio output stages and general

 0.1. Size:166K  inchange semiconductor
 bdt32f af bf cf df.pdf pdf_icon

BDT32

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS Designed fo

 0.2. Size:217K  inchange semiconductor
 bdt32f bdt32af bdt32bf bdt32cf bdt32df.pdf pdf_icon

BDT32

isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 25(Min)@ I = -1.0AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT32F; -60V(Min)- BDT32AFCEO(SUS)-80V(Min)- BDT32BF; -100V(Min)- BDT32CF-120V(Min)- BDT32DFComplement to Type BDT31F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operat

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Datasheet: BDT31A , BDT31AF , BDT31B , BDT31BF , BDT31C , BDT31CF , BDT31DF , BDT31F , 2SD718 , BDT32A , BDT32AF , BDT32B , BDT32BF , BDT32C , BDT32CF , BDT32DF , BDT32F .

History: KT8107D2 | 2SC2995 | SBCP53-10T1G | UN9217R | 2N1056 | 2SC999A | ECG2306

Keywords - BDT32 transistor datasheet

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