BDT32BF PDF and Equivalents Search

 

BDT32BF Specs and Replacement

Type Designator: BDT32BF

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220F

 BDT32BF Substitution

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BDT32BF datasheet

 ..1. Size:217K  inchange semiconductor

bdt32f bdt32af bdt32bf bdt32cf bdt32df.pdf pdf_icon

BDT32BF

isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32F; -60V(Min)- BDT32AF CEO(SUS) -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operat... See More ⇒

 8.1. Size:232K  inchange semiconductor

bdt32 bdt32a bdt32b bdt32c.pdf pdf_icon

BDT32BF

isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32; -60V(Min)- BDT32A CEO(SUS) -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i... See More ⇒

 9.1. Size:166K  inchange semiconductor

bdt32f af bf cf df.pdf pdf_icon

BDT32BF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS Designed fo... See More ⇒

 9.2. Size:157K  inchange semiconductor

bdt32 a b c.pdf pdf_icon

BDT32BF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C APPLICATIONS Designed for use in audio output stages and general... See More ⇒

Detailed specifications: BDT31C, BDT31CF, BDT31DF, BDT31F, BDT32, BDT32A, BDT32AF, BDT32B, TIP42C, BDT32C, BDT32CF, BDT32DF, BDT32F, BDT41, BDT41A, BDT41AF, BDT41B

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