All Transistors. BDT41B Datasheet

 

BDT41B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDT41B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 BDT41B Transistor Equivalent Substitute - Cross-Reference Search

   

BDT41B Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
bdt41 bdt41a bdt41b bdt41c.pdf

BDT41B
BDT41B

isc Silicon NPN Power Transistors BDT41/A/B/CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT41; 60V(Min)- BDT41ACEO(SUS)80V(Min)- BDT41B; 100V(Min)- BDT41CComplement to Type BDT42/42A/42B/42CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use

 0.1. Size:214K  inchange semiconductor
bdt41f bdt41af bdt41bf bdt41cf.pdf

BDT41B
BDT41B

isc Silicon NPN Power Transistors BDT41F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT41F; 60V(Min)- BDT41AFCEO(SUS)80V(Min)- BDT41BF; 100V(Min)- BDT41CFComplement to Type BDT42F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

 9.1. Size:107K  inchange semiconductor
bdt41f-af-bf-cf bdt41f af bf cf.pdf

BDT41B
BDT41B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF APPLICATIONS Designed for use in general purpose amplifer

 9.2. Size:158K  inchange semiconductor
bdt41 a b c.pdf

BDT41B
BDT41B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and sw

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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