All Transistors. BDT42BF Datasheet

 

BDT42BF Datasheet and Replacement


   Type Designator: BDT42BF
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220F
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BDT42BF Datasheet (PDF)

 ..1. Size:216K  inchange semiconductor
 bdt42f bdt42af bdt42bf bdt42cf.pdf pdf_icon

BDT42BF

isc Silicon PNP Power Transistors BDT42F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT42F; -60V(Min)- BDT42AFCEO(SUS)-80V(Min)- BDT42BF; -100V(Min)- BDT42CFComplement to Type BDT41F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign

 8.1. Size:217K  inchange semiconductor
 bdt42 bdt42a bdt42b bdt42c.pdf pdf_icon

BDT42BF

isc Silicon PNP Power Transistors BDT42/A/B/CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT42; -60V(Min)- BDT42ACEO(SUS)-80V(Min)- BDT42B; -100V(Min)- BDT42CComplement to Type BDT41/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i

 9.1. Size:157K  inchange semiconductor
 bdt42 a b c.pdf pdf_icon

BDT42BF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42/A/B/C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C Complement to Type BDT41/A/B/C APPLICATIONS Designed for use in general purpose amplifer and swi

 9.2. Size:106K  inchange semiconductor
 bdt42f-af-bf-cf bdt42f af bf cf.pdf pdf_icon

BDT42BF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42F/AF/BF/CF DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF Complement to Type BDT41F/AF/BF/CF APPLICATIONS Designed for use in general purpose ampl

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