All Transistors. BDT61A Datasheet

 

BDT61A Datasheet and Replacement


   Type Designator: BDT61A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
 

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BDT61A Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
bdt61 bdt61a bdt61b bdt61c.pdf pdf_icon

BDT61A

isc Silicon NPN Darlington Power Transistors BDT61/A/B/CDESCRIPTIONDC Current Gain -h = 750(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT61; 80V(Min)- BDT61A;CEO(SUS)100V(Min)- BDT61B; 120V(Min)- BDT61CComplement to Type BDT60/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

 0.1. Size:213K  inchange semiconductor
bdt61af.pdf pdf_icon

BDT61A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61AFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60AFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.1. Size:213K  inchange semiconductor
bdt61cf.pdf pdf_icon

BDT61A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61CFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.2. Size:213K  inchange semiconductor
bdt61f.pdf pdf_icon

BDT61A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61FDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Datasheet: BDT60AF , BDT60B , BDT60BF , BDT60C , BDT60CF , BDT60F , BDT60L , BDT61 , 2SB817 , BDT61AF , BDT61B , BDT61BF , BDT61C , BDT61CF , BDT61F , BDT61L , BDT62 .

History: FCS9015A

Keywords - BDT61A transistor datasheet

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