BDT62 Datasheet and Replacement
Type Designator: BDT62
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO220
BDT62 Substitution
BDT62 Datasheet (PDF)
bdt62 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION DC Current Gain -hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C Complement to Type BDT63/A/B/C APPLICATIONS Designed for use in audio amplifier ou
bdt62 bdt62a bdt62b bdt62c.pdf

isc Silicon PNP Darlington Power Transistors BDT62/A/B/CDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT62; -80V(Min)- BDT62A;CEO(SUS)-100V(Min)- BDT62B; -120V(Min)- BDT62CComplement to Type BDT63/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig
bdt62f.pdf

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistors BDT62FDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type BDT63FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier output stages , genera
Datasheet: BDT61A , BDT61AF , BDT61B , BDT61BF , BDT61C , BDT61CF , BDT61F , BDT61L , D965 , BDT62A , BDT62AF , BDT62B , BDT62BF , BDT62C , BDT62CF , BDT62F , BDT63 .
History: 2SB478
Keywords - BDT62 transistor datasheet
BDT62 cross reference
BDT62 equivalent finder
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History: 2SB478



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