BDT63AF Specs and Replacement
Type Designator: BDT63AF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 17 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO220F
BDT63AF Substitution
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BDT63AF datasheet
bdt63f bdt63af bdt63bf bdt63cf.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT63F/A/B/C DESCRIPTION Collector Current -I = 10A C High DC Current Gain-h = 1000(Min)@ I = 10A FE C Complement to Type BDT62F/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose... See More ⇒
bdt63 bdt63a bdt63b bdt63c.pdf
isc Silicon NPN Darlington Power Transistor BDT63/A/B/C DESCRIPTION Collector Current -I = 10A C High DC Current Gain-h = 1000(Min)@ I = 3A FE C Complement to Type BDT62/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT63/A/B/C DESCRIPTION Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDT62/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNI... See More ⇒
Detailed specifications: BDT62AF, BDT62B, BDT62BF, BDT62C, BDT62CF, BDT62F, BDT63, BDT63A, 2SC2383, BDT63B, BDT63BF, BDT63C, BDT63CF, BDT63F, BDT63-TO63, BDT64, BDT64A
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