BDT63B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT63B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO220
BDT63B Transistor Equivalent Substitute - Cross-Reference Search
BDT63B Datasheet (PDF)
bdt63 bdt63a bdt63b bdt63c.pdf
isc Silicon NPN Darlington Power Transistor BDT63/A/B/CDESCRIPTIONCollector Current -I = 10ACHigh DC Current Gain-h = 1000(Min)@ I = 3AFE CComplement to Type BDT62/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T
bdt63f bdt63af bdt63bf bdt63cf.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor BDT63F/A/B/CDESCRIPTIONCollector Current -I = 10ACHigh DC Current Gain-h = 1000(Min)@ I = 10AFE CComplement to Type BDT62F/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purpose
bdt63 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT63/A/B/C DESCRIPTION Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDT62/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
