BDT65 Specs and Replacement
Type Designator: BDT65
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO220
BDT65 Substitution
- BJT ⓘ Cross-Reference Search
BDT65 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNI... See More ⇒
bdt65 bdt65a bdt65b bdt65c.pdf 
isc Silicon NPN Darlington Power Transistor BDT65/A/B/C DESCRIPTION Collector Current -I = 12A C High DC Current Gain-h = 1000(Min)@ I = 5A FE C Complement to Type BDT64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
bdt65f-af-bf-cf bdt65f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64F/AF/BF/CF APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER V... See More ⇒
Detailed specifications: BDT64, BDT64A, BDT64AF, BDT64B, BDT64BF, BDT64C, BDT64CF, BDT64F, D667, BDT65A, BDT65AF, BDT65B, BDT65BF, BDT65C, BDT65CF, BDT65F, BDT81
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