BDT65 Datasheet, Equivalent, Cross Reference Search

   Type Designator: BDT65
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220

BDT65 Transistor Equivalent Substitute - Cross-Reference Search

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