BDT65CF Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT65CF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 22 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO220F
BDT65CF Transistor Equivalent Substitute - Cross-Reference Search
BDT65CF Datasheet (PDF)
bdt65f bdt65af bdt65bf bdt65cf.pdf
isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CFDESCRIPTIONCollector Current -I = 12ACHigh DC Current Gain-h = 1000(Min)@ I = 5AFE CComplement to Type BDT64F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RA
bdt65c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDT65C DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON Complement to type BDT64C APPLICATIONS For audio output stages and general purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsol
bdt65 bdt65a bdt65b bdt65c.pdf
isc Silicon NPN Darlington Power Transistor BDT65/A/B/CDESCRIPTIONCollector Current -I = 12ACHigh DC Current Gain-h = 1000(Min)@ I = 5AFE CComplement to Type BDT64/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T
bdt65 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNI
bdt65f-af-bf-cf bdt65f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64F/AF/BF/CF APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER V
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N3115
