BDT81 Specs and Replacement
Type Designator: BDT81
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO220F
BDT81 Substitution
- BJT ⓘ Cross-Reference Search
BDT81 datasheet
isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION DC Current Gain -h = 40(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT81; 80V(Min)- BDT83; CEO(SUS) 100V(Min)- BDT85; 120V(Min)- BDT87 Complement to Type BDT82/84/86/88 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ... See More ⇒
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf 
PNP BDT82 BDT84 BDT86 BDT88 NPN BDT81 BDT83 BDT85 BDT87 SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 BDT83 BDT85 BDT87. ... See More ⇒
bdt81f bdt83f bdt85f bdt87f.pdf
isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION DC Current Gain -h = 40(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT81F; 80V(Min)- BDT83F; CEO(SUS) 100V(Min)- BDT85F; 120V(Min)- BDT87F Complement to Type BDT82F/84F/86F/88F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed... See More ⇒
Detailed specifications: BDT65, BDT65A, BDT65AF, BDT65B, BDT65BF, BDT65C, BDT65CF, BDT65F, 2N3904, BDT81F, BDT82, BDT82F, BDT83, BDT83F, BDT84, BDT84F, BDT85
Keywords - BDT81 pdf specs
BDT81 cross reference
BDT81 equivalent finder
BDT81 pdf lookup
BDT81 substitution
BDT81 replacement
